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never stop thinking. hys72d16500hr?7?c hys72d32501hr?7?c 184 - pin registered dual-in- memory modules rdimm data sheet, rev. 1.0, apr. 2004 memory products
edition 2004-04 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. edition 2004-04 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
hys72d16500hr?7?c hys72d32501hr?7?c 184 - pin registered dual-in- memory modules rdimm data sheet, rev. 1.0, apr. 2004 memory products never stop thinking. data sheet, rev. 1.0, apr. 2004 memory products
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module data sheet 4 rev. 1.0, 2004-04 data sheet 4 rev. 1.0, 2004-04 hys72d16500hr?7?c, hys72d32501hr?7?c revision history: rev. 1.0 2004-04 previous version: rev. 0.5 2003?12 page subjects (major changes since last revision) 18 updated i dd values 13 , 14 , 24 , 25 editorial changes we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: techdoc.mp@infineon.com
data sheet 5 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module table of contents page data sheet 5 rev. 1.0, 2004-04 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4 current specification and conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.1 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5 spd contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7 application note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module overview data sheet 6 rev. 1.0, 2004-04 1 overview 1.1 features 184-pin registered 8-byte dual-in-line ddr sdram module for ?1u? pc, workstation and server main memory applications one rank 16m 72, 32m 72 organization jedec standard double data rate synchronous drams (ddr sdram) with a single + 2.5 v ( 0.2 v) power supply built with 128-mbit ddr sdrams in p-tsop-66-1 packages programmable cas latency, burst length, and wrap sequence (sequential & interleave) auto refresh (cbr) and self refresh all inputs and outputs sstl_2 compatible re-drive for all input signals using register and pll devices. serial presence detect with e 2 prom low profile modules form factor: 133.35 mm 30,40 mm (1.2?) 4.00 mm jedec standard reference layout for one rank 128mb: pc2100 registered dimm raw cards l,m gold plated contacts table 1 performance 1.2 description the hys72d[16/32][500/501]hr-7-c are low profile versions of the standard registered dimm modules with 1.2? inch (30,40 mm) height for 1u server applications. the low profile dimm versions are available as 16m 72 (128mb), 32m 72 (256mb). the memory array is designed with double data rate synchronous drams for ecc applications. all control and address signals are re-driven on the dimm using register devices and a pll for the clock distribution. this reduces capacitive loading to the system bus, but adds one cycle to the sdram timing. a variety of decoupling capacitors are mounted on the pc board. the dimms feature serial presence detect based on a serial e 2 prom device using the 2-pin i 2 c protocol. the first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. part number speed code ?7 unit speed grade component ddr266a ? module pc2100?2033 ? max. clock frequency @cl3 f ck3 ?mhz @cl2.5 f ck2.5 143 mhz @cl2 f ck2 133 mhz
data sheet 7 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module overview table 2 ordering information type compliance code description sdram technology pc2100 hys72d16500hr?7?c pc2100r?20331?l 1 rank 128 mb registered dimm ecc 128 mbit ( 8) hys72d32501hr?7?c pc2100r?20331?m 1 rank 256 mb registered dimm ecc 128 mbit ( 4)
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration data sheet 8 rev. 1.0, 2004-04 2 pin configuration the pin configuration of the registered ddr sdram dimm is listed by function in table 3 (184 pins). the abbreviations used in columns pin and buffer type are explained in table 4 and table 5 respectively. the pin numbering is depicted in figure 1 . table 3 pin configuration of rdimm pin# name pin type buffer type function clock signals 137 ck0 i sstl clock signal 138 ck0 isstl complement clock 21 cke0 i sstl clock enable rank 0 111 cke1 i sstl clock enable rank 1 note: 2-rank module nc nc sstl note: 1 -rank module control signals 157 s0 isstl chip select of rank 0 158 s1 isstl chip select of rank 1 note: 2-ranks module nc nc ? note: 1-rank module 154 ras isstl row address strobe 65 cas isstl column address strobe 63 we isstl write enable 10 reset ilv- cmo s register reset forces registered inputs low note: for detailed description of the power up and power management see the application note at the end of data sheet address signals 59 ba0 i sstl bank address bus 1:0 52 ba1 i sstl 48 a0 i sstl address bus 11:0 43 a1 i sstl 41 a2 i sstl 130 a3 i sstl 37 a4 i sstl 32 a5 i sstl 125 a6 i sstl address bus 11:0 29 a7 i sstl 122 a8 i sstl 27 a9 i sstl 141 a10 i sstl ap i sstl 118 a11 i sstl 115 a12 i sstl address signal 12 note: module based on 256 mbit or larger dies nc nc ? note: 128 mbit based module 167 a13 i sstl address signal 13 note: 1 gbit based module nc nc ? note: module based on 512 mbit or smaller dies data signals 2dq0i/osstl data bus 63:0 4dq1i/osstl 6dq2i/osstl 8dq3i/osstl 94 dq4 i/o sstl 95 dq5 i/o sstl 98 dq6 i/o sstl 99 dq7 i/o sstl 12 dq8 i/o sstl 13 dq9 i/o sstl 19 dq10 i/o sstl 20 dq11 i/o sstl 105 dq12 i/o sstl 106 dq13 i/o sstl 109 dq14 i/o sstl 110 dq15 i/o sstl 23 dq16 i/o sstl 24 dq17 i/o sstl 28 dq18 i/o sstl 31 dq19 i/o sstl table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function
data sheet 9 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration 114 dq20 i/o sstl data bus 63:0 117 dq21 i/o sstl 121 dq22 i/o sstl 123 dq23 i/o sstl 33 dq24 i/o sstl 35 dq25 i/o sstl 39 dq26 i/o sstl 40 dq27 i/o sstl 126 dq28 i/o sstl 127 dq29 i/o sstl 131 dq30 i/o sstl 133 dq31 i/o sstl 53 dq32 i/o sstl 55 dq33 i/o sstl 57 dq34 i/o sstl 60 dq35 i/o sstl 146 dq36 i/o sstl 147 dq37 i/o sstl 150 dq38 i/o sstl 151 dq39 i/o sstl 61 dq40 i/o sstl 64 dq41 i/o sstl 68 dq42 i/o sstl 69 dq43 i/o sstl 153 dq44 i/o sstl 155 dq45 i/o sstl 161 dq46 i/o sstl 162 dq47 i/o sstl 72 dq48 i/o sstl 73 dq49 i/o sstl 79 dq50 i/o sstl 80 dq51 i/o sstl 165 dq52 i/o sstl 166 dq53 i/o sstl 170 dq54 i/o sstl 171 dq55 i/o sstl 83 dq56 i/o sstl 84 dq57 i/o sstl 87 dq58 i/o sstl 88 dq59 i/o sstl table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function 174 dq60 i/o sstl data bus 63:0 175 dq61 i/o sstl 178 dq62 i/o sstl 179 dq63 i/o sstl 44 cb0 i/o sstl check bits 7:0 45 cb1 i/o sstl 49 cb2 i/o sstl 51 cb3 i/o sstl 134 cb4 i/o sstl 135 cb5 i/o sstl 142 cb6 i/o sstl 144 cb7 i/o sstl 5dqs0i/osstl data strobes 8:0 note: see block diagram for corresponding dq signals 14 dqs1 i/o sstl 25 dqs2 i/o sstl 36 dqs3 i/o sstl 56 dqs4 i/o sstl 67 dqs5 i/o sstl 78 dqs6 i/o sstl data strobes 8:0 86 dqs7 i/o sstl 47 dqs8 i/o sstl 97 dm0 i sstl data mask 0 note: 8 based module dqs9 i/o sstl data strobe 9 note: 4 based module 107 dm1 i sstl data mask 1 note: 8 based module dqs10 i/o sstl data strobe 10 note: 4 based module 119 dm2 i sstl data mask 2 note: 8 based module dqs11 i/o sstl data strobe 11 note: 4 based module 129 dm3 i sstl data mask 3 note: 8 based module dqs12 i/o sstl data strobe 12 note: 4 based module table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration data sheet 10 rev. 1.0, 2004-04 149 dm4 i sstl data mask 4 note: 8 based module dqs13 i/o sstl data strobe 13 note: 4 based module 159 dm5 i sstl data mask 5 note: 8 based module dqs14 i/o sstl data strobe 14 note: 4 based module 169 dm6 i sstl data mask 6 note: 8 based module dqs15 i/o sstl data strobe 15 note: 4 based module 177 dm7 i sstl data mask 7 note: 8 based module dqs16 i/o sstl data strobe 16 note: 4 based module 140 dm8 i sstl data mask 8 note: 8 based module dqs17 i/o sstl data strobe 17 note: 4 based module eeprom 92 scl i cmo s serial bus clock 91 sda i/o od serial bus data 181 sa0 i cmo s slave address select bus 2:0 182 sa1 i cmo s 183 sa2 i cmo s power supplies 1 v ref ai ? i/o reference voltage 184 v ddspd pwr ? eeprom power supply table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function 15, 22, 30, 54, 62, 77, 96, 104, 112, 128, 136, 143, 156, 164, 172, 180 v ddq pwr ? i/o driver power supply 7, 38, 46, 70, 85, 108, 120, 148, 168 v dd pwr ? power supply 3, 11, 18, 26, 34, 42, 50, 58, 66, 74, 81, 89, 93, 100, 116, 124, 132, 139, 145, 152, 160, 176 v ss gnd ? ground plane table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function
data sheet 11 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration other pins 82 v ddid ood v dd identification note: pin in tristate, indicating v dd and v ddq nets connected on pcb 9, 16, 17, 71, 75, 76, 90, 101, 102, 103, 113, 163, 173 nc nc ? not connected pins not connected on infineon rdimm?s table 3 pin configuration of rdimm (cont?d) pin# name pin type buffer type function table 4 abbreviations for pin type abbreviation description i standard input-only pin. digital levels. o output. digital levels. i/o i/o is a bidirectional input/output signal. ai input. analog levels. pwr power gnd ground nu not usable (jedec standard) nc not connected (jedec standard) table 5 abbreviations for buffer type abbreviation description sstl serial stub terminalted logic (sstl2) lv-cmos low voltage cmos cmos cmos levels od open drain. the corresponding pin has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-or.
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration data sheet 12 rev. 1.0, 2004-04 figure 1 pin configuration 184 pins, reg table 6 address table density organization memory ranks sdrams # of sdrams # of row/bank/ columns bits refresh period interval 128 mb 16m 8 1 128m 8 9 12 / 2 / 10 4k 64 ms 15.6 s 256 mb 32m 4 1 128m 4 18 12 / 2 / 11 4k 64 ms 15.6 s mppd0020 pin 002 pin 006 pin 010 pin 014 pin 018 pin 022 pin 026 pin 030 pin 034 pin 038 - - - - - - - - - - pin 004 pin 008 pin 012 pin 016 pin 020 pin 024 pin 028 pin 032 pin 036 pin 040 - - - - - - - - - - dq00 dq02 reset dqs1 v ss v ddq v ddq dq01 dq03 dq08 nc dq11 dq17 dq18 a5 dqs3 dq27 pin 044 pin 048 pin 052 pin 056 pin 060 pin 064 pin 068 pin 072 pin 076 pin 080 pin 084 pin 088 pin 092 pin 096 pin 100 pin 104 pin 108 pin 112 pin 116 pin 120 pin 124 pin 128 pin 132 pin 136 pin 140 pin 144 pin 148 pin 152 pin 156 pin 160 pin 164 pin 168 pin 172 pin 176 pin 180 pin 184 cb00 a0 ba1 dqs4 dq35 dq41 dq42 dq48 nc dq51 dq57 dq59 scl dm8/dqs17 cb07 v ddspd - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - pin 042 pin 046 pin 050 pin 054 pin 058 pin 062 pin 066 pin 070 pin 074 pin 078 pin 082 pin 086 pin 090 pin 094 pin 098 pin 102 pin 106 pin 110 pin 114 pin 118 pin 122 pin 126 pin 130 pin 134 pin 138 pin 142 pin 146 pin 150 pin 154 pin 158 pin 162 pin 166 pin 170 pin 174 pin 178 pin 182 v ddq v ddq dqs6 dqs7 nc dq04 dq06 nc dq13 dq15 dq20 a11 a8 dq28 a3 dq04 ck0 cb06 dq36 dq38 ras s1 /nc dq47 dq53 dq54 dq60 dq62 sa1 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - pin 001 pin 005 pin 009 pin 013 pin 017 pin 021 pin 025 pin 029 pin 033 pin 037 - - - - - - - - - - pin 003 pin 007 pin 011 pin 015 pin 019 pin 023 pin 027 pin 031 pin 035 pin 039 - - - - - - - - - - v ref dqs0 nc dq09 nc cke0 dqs2 a7 dq24 a4 dq10 dq16 a9 dq19 dq25 dq26 pin 043 pin 047 pin 051 pin 055 pin 059 pin 063 pin 067 pin 071 pin 075 pin 079 pin 083 pin 087 pin 091 pin 095 pin 099 pin 103 pin 107 pin 111 pin 115 pin 119 pin 123 pin 127 pin 131 pin 135 pin 139 pin 143 pin 147 pin 151 pin 155 pin 159 pin 163 pin 167 pin 171 pin 175 pin 179 pin 183 a1 dqs8 cb03 dq33 ba0 we dqs5 nc nc dq50 dq56 dq58 sda dq05 dq07 nc dm1/dqs10 cke1/nc a12/nc dm2/dqs11 dq23 dq29 dq30 cb5 dq37 dq39 dq45 dm5/dqs14 nc a13/nc dq55 dq61 dq63 sa2 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - pin 041 pin 045 pin 049 pin 053 pin 057 pin 061 pin 065 pin 069 pin 073 pin 077 pin 081 pin 085 pin 089 pin 093 pin 097 pin 101 pin 105 pin 109 pin 113 pin 117 pin 121 pin 125 pin 129 pin 133 pin 137 pin 141 pin 145 pin 149 pin 153 pin 157 pin 161 pin 165 pin 169 pin 173 pin 177 pin 181 a2 cb01 cb02 dq32 dq34 dq40 cas dq43 dq49 v ddq dm00/dqs9 nc dq12 dq14 nc dq21 dq22 a6 dm3/dqs12 dq31 ck0 a10/ap dm4/dqs13 dq44 s0 dq46 dq52 dm6/dqs15 nc dm7/dqs16 sa0 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ss v ddid frontside backside
data sheet 13 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration figure 2 block diagram raw card l 72, 1 rank, 8, ecc notes 1. v dd = v ddq , therefore v ddid strap open 2. dq, dqs, dm resistors are 22 ohms 5% 3. ban, an, ras , cas , we resistors are 22 ohms 5% mpbd1101 s0 d6 dm0/dqs9 dqs0 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 d0 dm1/dqs10 dqs1 dq8 dq9 dq10 dq11 dq12 dq13 dq14 dq15 d1 dm2/dqs11 dqs2 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 d2 dm5/dqs14 dqs5 dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 d5 dm4/dqs13 dqs4 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 d4 dm3/dqs12 dqs3 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 d3 d8 d7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm6/dqs15 dqs6 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dm8/dqs17 dqs8 cb0 cb1 cb2 cb3 cb4 cb5 cb6 cb7 dm7/dqs16 dqs7 dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 dm cs dqs i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 cs: sdrams d0- d8 cke: sdrams d0 - d8 ba0 - ba1: sdrams d0 - d8 a0 - an: sdrams d0 - d8 ras: sdrams d0 - d8 cas: sdrams d0 - d8 we: sdrams d0 - d8 r e g i s t e r s0 cke0 ba0 - ba1 a0 - an ras cas we pck pck reset rs0 rcke0 rba0 - rba1 ra0-ran rras rcas rwe scl sad sa0 sa1 sa2 v ss scl sad a0 a1 a2 wp e0 v dd : spd eeprom e0 v dd / v ddq : sdrams d0 - d8 v ref : sdrams d0 - d8 v ss : sdrams d0 - d8 strap: see note 1 v dd,spd v dd / v ddq v ref v ss v ddid ck0 ck0 pck pck pll
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module pin configuration data sheet 14 rev. 1.0, 2004-04 figure 3 block diagram raw card m 72, 1 rank, 4, ecc notes 1. v dd = v ddq , therefore v ddid strap open 2. dq, dqs, dm resistors are 22 ohms 5% 3. ban, an, ras , cas , we resistors are 22 ohms 5% 4. each chip select and cke pair alternate between decks for thermal enhancement. mpbd1901 dqs0 dq0 dq1 dq2 dq3 d0 d1 dqs1 dq8 dq9 dq10 dq11 d2 d3 d4 d5 dqs2 dq16 dq17 dq18 dq19 dqs3 dq24 dq25 dq26 dq27 dqs17 cb4 cb5 cb6 cb7 dqs12 dq28 dq29 dq30 dq31 dqs15 dq52 dq53 dq54 dq55 d12 dqs16 dq60 dq61 dq62 dq63 d13 dqs14 dq44 dq45 dq46 dq47 d14 dqs5 dq40 dq41 dq42 dq43 d15 dqs4 dq32 dq33 dq34 dq35 d16 d17 dqs13 dq36 dq37 dq38 dq39 d6 d7 d8 dqs7 dq56 dq57 dq58 dq59 dqs6 dq48 dq49 dq50 dq51 dqs8 cb0 cb1 cb2 cb3 dqs10 dq12 dq13 dq14 dq15 dqs9 dq4 dq5 dq6 dq7 dqs11 dq20 dq21 dq22 dq23 d9 d10 d11 scl sad sa0 sa1 sa2 v ss scl sad a0 a1 a2 wp e0 rs0 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs dqs i/o 0 i/o 1 i/o 2 i/o 3 cs: sdrams d0- d17 cke: sdrams d0 - d17 ba0 - ba1: sdrams d0 - d17 a0 - an: sdrams d0 - d17 ras: sdrams d0 - d17 cas: sdrams d0 - d17 we: sdrams d0 - d17 r e g i s t e r s0 cke0 ba0 - ba1 a0 - an ras cas we pck pck reset rs0 rcke0 rba0 - rba1 ra0-ran rras rcas rwe v dd : spd eeprom e0 v dd / v ddq : sdrams d0 - d17 v ref : sdrams d0 - d17 v ss : sdrams d0 - d17 strap: see note 1 v dd,spd v dd / v ddq v ref v ss v ddid pll pck pck ck0 ck0
data sheet 15 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module electrical characteristics 3 electrical characteristics 3.1 operating conditions attention: permanent damage to the device may occur if ?absolute maximum ratings? are exceeded. this is a stress rating only, and functional operation should be restricted to recommended operation conditions. exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit. table 7 absolute maximum ratings parameter symbol values unit note/ test condition min. typ. max. voltage on i/o pins relative to v ss v in , v out ?0.5 ? v ddq + 0.5 v? voltage on inputs relative to v ss v in ?1 ? +3.6 v ? voltage on v dd supply relative to v ss v dd ?1 ? +3.6 v ? voltage on v ddq supply relative to v ss v ddq ?1 ? +3.6 v ? operating temperature (ambient) t a 0?+70 c? storage temperature (plastic) t stg -55 ? +150 c? power dissipation (per sdram component) p d ?1?w? short circuit output current i out ?50?ma? table 8 electrical characteristics and dc operating conditions parameter symbol values unit note/test condition 1) min. typ. max. device supply voltage v dd 2.3 2.5 2.7 v output supply voltage v ddq 2.3 2.5 2.7 v 2) eeprom supply voltage v ddspd 2.3 2.5 3.6 v ? supply voltage, i/o supply voltage v ss , v ssq 00v? input reference voltage v ref 0.49 v ddq 0.5 v ddq 0.51 v ddq v 3) i/o termination voltage (system) v tt v ref ? 0.04 v ref + 0.04 v 4) input high (logic1) voltage v ih(dc) v ref + 0.15 v ddq + 0.3 v 5) input low (logic0) voltage v il(dc) ?0.3 v ref ? 0.15 v 5) input voltage level, ck and ck inputs v in(dc) ?0.3 v ddq + 0.3 v 5) input differential voltage, ck and ck inputs v id(dc) 0.36 v ddq + 0.6 v 5)6) vi-matching pull-up current to pull-down current vi ratio 0.71 1.4 ? 7) input leakage current i i ?2 2 a any input 0 v v in v dd ; all other pins not under test =0v 8)
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module electrical characteristics data sheet 16 rev. 1.0, 2004-04 output leakage current i oz ?5 5 a dqs are disabled; 0v v out v ddq 8) output high current, normal strength driver i oh ??16.2ma v out = 1.95 v output low current, normal strength driver i ol 16.2 ? ma v out = 0.35 v 1) 0 c t a 70 c; v ddq = 2.5 v 0.2 v, v dd = +2.5 v 0.2 v; 2) under all conditions, v ddq must be less than or equal to v dd . 3) peak to peak ac noise on v ref may not exceed 2% v ref (dc) . v ref is also expected to track noise variations in v ddq . 4) v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref , and must track variations in the dc level of v ref . 5) inputs are not recognized as valid until v ref stabilizes. 6) v id is the magnitude of the difference between the input level on ck and the input level on ck . 7) the ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 v. for a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. 8) values are shown per pin. table 9 i dd conditions parameter symbol operating current 0 one bank; active/ precharge; dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. i dd0 operating current 1 one bank; active/read/precharge; burst length = 4; see component data sheet. i dd1 precharge power-down standby current all banks idle; power-down mode; cke v il,max i dd2p precharge floating standby current cs v ih,,min , all banks idle; cke v ih,min ; address and other control inputs changing once per clock cycle; v in = v ref for dq, dqs and dm. i dd2f precharge quiet standby current cs v ihmin , all banks idle; cke v ih,min ; v in = v ref for dq, dqs and dm; address and other control inputs stable at v ih,min or v il,max . i dd2q active power-down standby current one bank active; power-down mode; cke v ilmax ; v in = v ref for dq, dqs and dm. i dd3p active standby current one bank active; cs v ih,min ; cke v ih,min ; t rc = t ras,max ; dq, dm and dqs inputs changing twice per clock cycle; address and control inputs changing once per clock cycle. i dd3n table 8 electrical characteristics and dc operating conditions (cont?d) parameter symbol values unit note/test condition 1) min. typ. max.
data sheet 17 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module electrical characteristics operating current read one bank active; burst length = 2; reads; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; cl = 2 for ddr266(a), cl = 3 for ddr333 and ddr400b; i out =0ma i dd4r operating current write one bank active; burst length = 2; writes; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; cl = 2 for ddr266(a), cl = 3 for ddr333 and ddr400b i dd4w auto-refresh current t rc = t rfcmin , burst refresh i dd5 self-refresh current cke 0.2 v; external clock on i dd6 operating current 7 four bank interleaving with burst length = 4; see component data sheet. i dd7 table 9 i dd conditions (cont?d) parameter symbol
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module current specification and conditions data sheet 18 rev. 1.0, 2004-04 4 current specification and conditions table 10 i dd specification for hys72d[16/32][500/501]hr-7-c part number & organization hys72d16500hr?7?c hys72d32501hr?7?c unit notes 1)2) 1) test condition for maximum values: v dd =2.7v, t a =10c 2) module i dd is calculated on the basis of component i dd and includes register an pll 128mb 256mb 72 72 1 rank 1 rank ?7 ?7 symbol typ. max. typ. max. i dd0 1080 1170 1580 1760 ma 3) 3) the module i dd values are calculated from the component i dd datasheet values are: n * i dd [component] for single bank modules (n: number of components per module bank) n * i dd [component] + n * i dd3n [component] for two bank modules (n: number of components per module bank) i dd1 1220 1350 1850 2120 ma 3)4) 4) dq i/o ( i ddq ) currents are not included into calculations: module i dd values will be measured differently depending on load conditions i dd2p 400 410 430 450 ma 5) 5) the module i dd values are calculated from the component i dd datasheet values are: n * i dd [component] for single bank modules (n: number of components per module bank) 2* n * i dd [component] for two bank modules (n: number of components per module bank i dd2f 590 560 810 740 ma 5) i dd2q 510 570 650 750 ma 5) i dd3p 460 490 540 610 ma 5) i dd3n 650 740 920 1100 ma 5) i dd4r 1220 1350 1850 2120 ma 3)4) i dd4w 1260 1400 1940 2210 ma 3) i dd5 1490 1850 2390 3110 ma 3) i dd6 400 400 430 430 ma 5) i dd7 1850 2120 3110 3650 ma 3)4)
data sheet 19 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module current specification and conditions 4.1 ac characteristics table 11 ac timing - absolute specifications for pc2100 parameter symbol ?7 unit note/ test condition 1) ddr266a min. max. dq output access time from ck/ck t ac ?0.75 +0.75 ns 2)3)4)5) dqs output access time from ck/ck t dqsck ?0.75 +0.75 ns 2)3)4)5) ck high-level width t ch 0.45 0.55 t ck 2)3)4)5) ck low-level width t cl 0.45 0.55 t ck 2)3)4)5) clock half period t hp min. ( t cl , t ch )ns 2)3)4)5) clock cycle time t ck2.5 7.5 12 ns cl = 2.5 2)3)4)5) t ck2 7.5 12 ns cl = 2.0 2)3)4)5) t ck1.5 ? ? ns cl = 1.5 2)3)4)5) dq and dm input hold time t dh 0.5 ? ns 2)3)4)5) dq and dm input setup time t ds 0.5 ? ns 2)3)4)5) control and addr. input pulse width (each input) t ipw 2.2 ? ns 2)3)4)5)6) dq and dm input pulse width (each input) t dipw 1.75 ? ns 2)3)4)5)6) data-out high-impedance time from ck/ck t hz ? +0.75 ns 2)3)4)5)7) data-out low-impedance time from ck/ck t lz ?0.75 +0.75 ns 2)3)4)5)7) write command to 1 st dqs latching transition t dqss 0.75 1.25 t ck 2)3)4)5) dqs-dq skew (dqs and associated dq signals) t dqsq ?+0.5nstsopii 2)3)4)5) data hold skew factor t qhs ?0.75nstsopii 2)3)4)5) dq/dqs output hold time t qh t hp ? t qhs ?ns 2)3)4)5) dqs input low (high) pulse width (write cycle) t dqsl,h 0.35 ? t ck 2)3)4)5) dqs falling edge to ck setup time (write cycle) t dss 0.2 ? t ck 2)3)4)5) dqs falling edge hold time from ck (write cycle) t dsh 0.2 ? t ck 2)3)4)5) mode register set command cycle time t mrd 2? t ck 2)3)4)5) write preamble setup time t wpres 0? ns 2)3)4)5)8) write postamble t wpst 0.40 0.60 t ck 2)3)4)5)9) write preamble t wpre 0.25 ? t ck 2)3)4)5) address and control input setup time t is 0.9 ? ns fast slew rate 3)4)5)6)10) 1.0 ? ns slow slew rate 3)4)5)6)10) address and control input hold time t ih 0.9 ? ns fast slew rate 3)4)5)6)10) 1.0 ? ns slow slew rate 3)4)5)6)10) read preamble t rpre 0.9 1.1 t ck cl > 1.5 2)3)4)5) t rpre1.5 na t ck cl = 1.5 2)3)4)5)11) read preamble setup time t rpres na ns 2)3)4)5)12) read postamble t rpst 0.40 0.60 t ck 2)3)4)5)
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module current specification and conditions data sheet 20 rev. 1.0, 2004-04 active to precharge command t ras 45 120e+3 ns 2)3)4)5) active to active/auto-refresh command period t rc 65 ? ns 2)3)4)5) auto-refresh to active/auto-refresh command period t rfc 75 ? ns 2)3)4)5) active to read or write delay t rcd 20 ? ns 2)3)4)5) precharge command period t rp 20 ? ns 2)3)4)5) active to autoprecharge delay t rap t rcd or t rasmin ns 2)3)4)5) active bank a to active bank b command t rrd 15 ? ns 2)3)4)5) write recovery time t wr 15 ? ns 2)3)4)5) auto precharge write recovery + precharge time t dal t ck 2)3)4)5)13) internal write to read command delay t wtr 1? t ck cl > 1.5 2)3)4)5) t wtr1.5 ?? t ck cl = 1.5 2)3)4)5) exit self-refresh to non-read command t xsnr 75 ? ns 2)3)4)5) exit self-refresh to read command t xsrd 200 ? t ck 2)3)4)5) average periodic refresh interval t refi ? 15.6 s 2)3)4)5)14) 1) 0 c t a 70 c; v ddq = 2.5 v 0.2 v, v dd = +2.5 v 0.2 v 2) input slew rate 1 v/ns for ddr400, ddr333, ddr266, and = 1 v/ns for ddr200 3) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross: the input reference level for signals other than ck/ck , is v ref . ck/ck slew rate are 1.0 v/ns. 4) inputs are not recognized as valid until v ref stabilizes. 5) the output timing reference level, as measured at the timing reference point indicated in ac characteristics (note 3) is v tt . 6) these parameters guarantee device timing, but they are not necessarily tested on each device. 7) t hz and t lz transitions occur in the same access time windows as valid data transitions. these parameters are not referred to a specific voltage level, but specify when the device is no longer driving (hz), or begins driving (lz). 8) the specific requirement is that dqs be valid (high, low, or some point on a valid transition) on or before this ck edge. a valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previously in progress on the bus, dqs will be transitioning from hi-z to logic low. if a previous write was in progress, dqs could be high, low, or transitioning from high to low at this time, depending on t dqss . 9) the maximum limit for this parameter is not a device limit. the device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 10) fast slew rate 1.0 v/ns , slow slew rate 0.5 v/ns and < 1 v/ns for command/address and ck & ck slew rate > 1.0 v/ns, measured between v ih(ac) and v il(ac) . 11) cas latency 1.5 operation is supported on ddr200 devices only 12) t rpres is defined for cl = 1.5 operation only 13) for each of the terms, if not already an integer, round to the next highest integer. t ck is equal to the actual system clock cycle time. 14) a maximum of eight autorefresh commands can be posted to any given ddr sdram device. table 11 ac timing - absolute specifications for pc2100 (cont?d) parameter symbol ?7 unit note/ test condition 1) ddr266a min. max.
data sheet 21 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module spd contents 5 spd contents table 12 spd codes for hys72d[16/32][500/501]hr-7-c part number & organization hys72d16500hr?7?c hys72d32501hr?7?c 128 mb 256 mb 72 72 1 rank 1 rank label code pc2100r?20331 pc2100r?20331 jedec spd revision rev. 1.0 rev. 1.0 byte# description hex hex 0 programmed spd bytes in e2prom 80 80 1 total number of bytes in e2prom 08 08 2 memory type (ddr = 07h) 07 07 3 number of row addresses 0c 0c 4 number of column addresses 0a 0b 5 number of dimm ranks 01 01 6 data width (lsb) 48 48 7 data width (msb) 00 00 8 interface voltage levels 04 04 9 tck @ clmax (byte 18) [ns] 70 70 10 tac sdram @ clmax (byte 18) [ns] 75 75 11 error correction support (non- / ecc) 02 02 12 refresh rate 80 80 13 primary sdram width 08 04 14 error checking sdram width 08 04 15 tccd [cycles] 01 01 16 burst length supported 0e 0e 17 number of banks on sdram device 04 04 18 cas latency 0c 0c 19 cs latency 01 01 20 write latency 02 02 21 dimm attributes 26 26 22 component attributes c1 c1 23 tck @ clmax -0.5 (byte 18) [ns] 75 75 24 tac sdram @ clmax -0.5 [ns] 75 75 25 tck @ clmax -1 (byte 18) [ns] 00 00 26 tac sdram @ clmax -1 [ns] 00 00 27 trpmin [ns] 50 50 28 trrdmin [ns] 3c 3c 29 trcdmin [ns] 50 50 30 trasmin [ns] 2d 2d 31 module density per bank 20 40 32 tas, tcs [ns] 90 90
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module spd contents data sheet 22 rev. 1.0, 2004-04 33 tah, tch [ns] 90 90 34 tds [ns] 50 50 35 tdh [ns] 50 50 36 ? 40 not used 00 00 41 trcmin [ns] 41 41 42 trfcmin [ns] 4b 4b 43 tckmax [ns] 30 30 44 tdqsqmax [ns] 32 32 45 tqhsmax [ns] 75 75 46 not used 00 00 47 dimm pcb height 01 01 48 ? 61 not used 00 00 62 spd revision 10 10 63 checksum of byte 0-62 b9 d2 64 jedec id code of infineon (1) c1 c1 65 ? 71 jedec id code of infineon (2 - 8) 00 00 72 module manufacturer location xx xx 73 part number, char 1 37 37 74 part number, char 2 32 32 75 part number, char 3 44 44 76 part number, char 4 31 33 77 part number, char 5 36 32 78 part number, char 6 35 35 79 part number, char 7 30 30 80 part number, char 8 30 31 81 part number, char 9 48 48 82 part number, char 10 52 52 83 part number, char 11 37 37 84 part number, char 12 43 43 85 part number, char 13 20 20 86 part number, char 14 20 20 87 part number, char 15 20 20 88 part number, char 16 20 20 89 part number, char 17 20 20 90 part number, char 18 20 20 table 12 spd codes for hys72d[16/32][500/501]hr-7-c part number & organization hys72d16500hr?7?c hys72d32501hr?7?c 128 mb 256 mb 72 72 1 rank 1 rank label code pc2100r?20331 pc2100r?20331 jedec spd revision rev. 1.0 rev. 1.0 byte# description hex hex
data sheet 23 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module spd contents 91 module revision code xx xx 92 test program revision code xx xx 93 module manufacturing date year xx xx 94 module manufacturing date week xx xx 95 ? 98 module serial number (1 - 4) xx xx 99 ? 127 not used 00 00 table 12 spd codes for hys72d[16/32][500/501]hr-7-c part number & organization hys72d16500hr?7?c hys72d32501hr?7?c 128 mb 256 mb 72 72 1 rank 1 rank label code pc2100r?20331 pc2100r?20331 jedec spd revision rev. 1.0 rev. 1.0 byte# description hex hex
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module package outlines data sheet 24 rev. 1.0, 2004-04 6 package outlines figure 4 package outlines: raw card m HYS72D32501HR-7-C l-dim-184-12-3 1 92 a 93 184 128.95 a 0.1 a bc 133.35 4 max. 0.15 b a c 1.27 0.4 b c 0.13 30.48 0.1 6.35 0.1 2.5 64.77 ?0.1 abc 2.175 6.62 49.53 0.1 4 0.1 0.1 1.8 a c b 3.8 0.13 3 min. 17.8 10 1.27 1 0.05 a 0.1 c b detail of contacts 0.2 2.5 0.2 120.65 x 95 1.27 = 1) 1) burr max. 0.4 allowed 1) on ecc modules only
data sheet 25 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module package outlines 92 1 184 93 a 0.1 0.1 4 c b 128.95 a a 133.35 4 max. 0.15 b a c 1.27 0.4 b c 0.13 30.48 0.1 ?0.1 2.5 0.1 x 64.77 95 a bc 120.65 1.27 = 2.175 6.62 6.35 49.53 17.8 10 3 min. 3.8 0.13 0.05 1 1.27 b 0.1 a c 0.2 detail of contacts 0.2 2.5 1.8 0.1 0.1 c b a 1) burr max. 0.4 allowed 1) on ecc modules only figure 5 package outline: raw card l hys72d16500hr-7-c l-dim-184-13-2
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module application note data sheet 26 rev. 1.0, 2004-04 7 application note power up and power management on ddr registered dimms (according to jedec ballot jc-42.5 item 1173) 184-pin double data rate (ddr) regist ered dimms include two new features to facilitate controlled power-up and to minimize power consumption during low power mode. one feature is externally controlled via a system- generated reset signal; the second is based on module detection of the input clocks. these enhancements permit the modules to power up with sdram outputs in a high-z state (eliminating risk of high current dissipations and/or dotted i/os), and result in the powering-down of module support devices (registers and phase-locked loop) when the memory is in self-refresh mode. the new reset pin controls power dissipation on the module?s registers and ensures that cke and other sdram inputs are maintained at a valid ?low? level during power-up and self refresh. when reset is at a low level, all the register outputs are forced to a low level, and all differential register input receivers are powered down, resulting in very low register power consumption. the reset pin, located on dimm tab #10, is driven from the system as an asynchronous signal according to the attached details. using this function also permits the system and dimm clocks to be stopped during memory self refresh operation, while ensuring that the sdrams stay in self refresh mode. as described in the table above, a low on the reset input ensures that the clock enable (cke) signal(s) are maintained low at the sdram pins (cke being one of the 'q' signals at the register output). holding cke low maintains a high impedance state on the sdram dq, dqs and dm outputs ? where they will remain until activated by a valid ?read? cycle. cke low also maintains sdrams in self refresh mode when applicable. the ddr pll devices automatically detect clock activity above 20mhz. when an input clock frequency of 20mhz or greater is detected, the pll begins operation and initiates clock frequency lock (the minimum operating frequency at which all specifications will be met is 95mhz). if the clock input frequency drops below 20mhz (actual detect frequency will vary by vendor), the pll vco (voltage controlled oscillator) is stopped, outputs are made high-z, and the differential inputs are powered down ? resulting in a total pll current consumption of less than 1ma. use of this low power pll function makes the use of the pll reset (or g pin) unnecessary, and it is tied inactive on the dimm. this application note describes the required and optional system sequences associated with the ddr registered dimm 'reset ' function. it is important to note that all references to cke refer to both cke0 and cke1 for a 2- bank dimm. because reset applies to all dimm register devices, it is therefore not possible to uniquely control cke to one physical dimm bank through the use of the reset pin. table 13 reset truth table register inputs register outputs reset ck ck data in (d) data out (q) h rising falling h h h rising falling l l h l or h l or h x qo h high z high z x illegal input conditions l x or hi-z x or hi-z x or hi-z l x: don?t care, hi-z: high impedance, qo: data latched at the previous of ck rising and ck falling
data sheet 27 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module application note power-up sequence with reset ? required 1. the system sets reset at a valid low level. this is the preferred default state during power-up. this input condition forces all register outputs to a low state independent of the condition on the register inputs (data and clock), ensuring that cke is at a stable low-level at the ddr sdrams. 2. the power supplies should be initialized according to the jedec-approved initialization sequence for ddr sdrams. 3. stabilization of clocks to the sdram the system must drive clocks to the application frequency (pll operation is not assured until the input clock reaches 20 mhz). stability of clocks at the sdrams will be affected by all applicable system clock devices, and time must be allotted to permit all clock devices to settle. once a stable clock is received at the dimm pll, the required pll stabilization time (assuming power to the dimm is stable) is 100 microseconds. when a stable clock is present at the sdram input (driven from the pll), the ddr sdram requires 200 sec prior to sdram operation. 4. the system applies valid logic levels to the data inputs of the register (address and controls at the dimm connector). cke must be maintained low and all other inputs should be driven to a known state. in general these commands can be determined by the system designer. one option is to apply an sdram ?nop? command (with cke low), as this is the first command defined by the jedec initialization sequence (ideally this would be a ?nop deselect? command). a second option is to apply low levels on all of the register inputs to be consistent with the state of the register outputs. 5. the system switches reset to a logic ?high? level. the sdram is now functional and prepared to receive commands. since the reset signal is asynchronous, setting the reset timing in relation to a specific clock edge is not required (during this period, register inputs must remain stable). 6. the system must maintain stable register inputs until normal register operation is attained. the registers have an activation time that allows their clock receivers, data input receivers, and output drivers sufficient time to be turned on and become stable. during this time the system must maintain the valid logic levels described in step 5. it is also a functional requirement that the registers maintain a low state at the cke outputs to guarantee that the ddr sdrams continue to receive a low level on cke. register activation time ( t (act) ), from asynchronous switching of reset from low to high until the registers are stable and ready to accept an input signal, is specified in the register and dimm do-umentation. 7. the system can begin the jedec-defined ddr sdram power-up sequence (according to the jedec- pproved initialization sequence). self refresh entry (reset low, clocks powered off) ? optional self refresh can be used to retain data in ddr sdram dimms even if the rest of the system is powered down and the clocks are off. this mode allows the ddr sdrams on the dimm to retain data without external clocking. self refresh mode is an ideal time to utilize the reset pin, as this can reduce register power consumption (reset low deactivates register ck and ck, data input receivers, and data output drivers). 1. 1. the system applies self refresh entry command. (cke low, cs low, ras low, cas low, we high) note: note: the commands reach the ddr sdram one clock later due to the additional register pipelining on a registered dimm. after this command is issued to the sdram, all of the address and control and clock input conditions to the sdram are don?t cares? with the exception of cke. 2. the system sets reset at a valid low level. this input condition forces all register outputs to a low state, independent of the condition on the registerm inputs (data and clock), and ensures that cke, and all other control and address signals, are a stable low-level at the ddr sdrams. since the reset signal is asynchronous, setting the reset timing in relation to a specific clock edge is not required. 3. the system turns off clock inputs to the dimm. (optional) a. in order to reduce dimm pll current, the clock inputs to the dimm are turned off, resulting in high-z clock
hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module application note data sheet 28 rev. 1.0, 2004-04 inputs to both the sdrams and the registers. this must be done after the reset deactivate time of the register (t (inact) . the deactivate time defines the time in which the clocks and the control and address signals must maintain valid levels after reset low has been applied and is specified in the register and dimm documentation. b.the system may release dimm address and control inputs to high-z. this can be done after the reset deactivate time of the register. the deactivate time defines the time in which the clocks and the control and the address signals must maintain valid levels after reset low has been applied. it is highly recommended that cke continue to remain low during this operation. 4. the dimm is in lowest power self refresh mode. self refresh exit (reset low, clocks powered off) ? optional 1. stabilization of clocks to the sdram. the system must drive clocks to the application frequency (pll operation is not assured until the input clock reaches ~20mhz). stability of clocks at the sdrams will be affected by all applicable system clock devices, and time must be allotted to permit all clock devices to settle. once a stable clock is received at the dimm pll, the required pll stabilization time (assuming power to the dimm is stable) is 100 microseconds. 2. the system applies valid logic levels to the data inputs of the register (address and controls at the dimm connector). cke must be maintained low and all other inputs should be driven to a known state. in general these commands can be determined by the system designer. one option is to apply an sdram ?nop? command (with cke low), as this is the first command defined by the jedec self refresh exit sequence (ideally this would be a ?nop deselect? command). a second option is to apply low levels on all of the register inputs, to be consistent with the state of the register outputs. 3. the system switches reset to a logic ?high? level. the sdram is now functional and prepared to receive commands. since the reset signal is asynchronous, reset timing relationship to a specific clock edge is not required (during this period, register inputs must remain stable). 4. the system must maintain stable register inputs until normal register operation is attained. the registers have an activation time that allows the clock receivers, input receivers, and output drivers sufficient time to be turned on and become stable. during this time the system must maintain the valid logic levels described in step 2. it is also a functional requirement that the registers maintain a low state at the cke outputs to guarantee that the ddr sdrams continue to receive a low level on cke. register activation time (t (act) ), from asynchronous switching of reset from low to high until the registers are stable and ready to accept an input signal, is specified in the register and dimm do-umentation. 5. system can begin the jedec-defined ddr sdram self refresh exit procedure. self refresh entry (reset low, clocks running) ? optional although keeping the clocks running increases power consumption from the on-dimm pll during self refresh, this is an alternate operating mode for these dimms. 1. 1. system enters self refresh entry command. (cke low, cs low, ras low, cas low, we high) note: note: the commands reach the ddr sdram one clock later due to the additional register pipelining on a registered dimm. after this command is issued to the sdram, all of the address and control and clock input conditions to the sdram are don?t cares ? with the exception of cke. 2. the system sets reset at a valid low level. this input condition forces all register outputs to a low state, independent of the condition on the data and clock register inputs, and ensures that cke is a stable low-level at the ddr sdrams. 3. the system may release dimm address and control inputs to high-z. this can be done after the reset deactivate time of the register (t (inact) ). the deactivate time describes the time in which the clocks and the control and the address signals must maintain valid levels after reset low has been applied. it is highly recommended that cke continue to remain low during the operation. 4. the dimm is in a low power, self refresh mode.
data sheet 29 rev. 1.0, 2004-04 hys72d[16/32][500/501]hr-7-c 184-pin registered dual-in-line memory module application note self refresh exit (reset low, clocks running) ? optional 1. the system applies valid logic levels to the data inputs of the register (address and controls at the dimm connector). cke must be maintained low and all other inputs should be driven to a known state. in general these commands can be determined by the system designer. one option is to apply an sdram ?nop? command (with cke low), as this is the first command defined by the self refresh exit sequence (ideally this would be a ?nop deselect? command). a second option is to apply low levels on all of the register inputs to be consistent with the state of the register outputs. 2. the system switches reset to a logic 'high' level. the sdram is now functional and prepared to receive commands. since the reset signal is asynchronous, it does not need to be tied to a particular clock edge (during this period, register inputs must continue to remain stable). 3. the system must maintain stable register inputs until normal register operation is attained. the registers have an activation time that allows the clock receivers, input receivers, and output drivers sufficient time to be turned on and become stable. during this time the system must maintain the valid logic levels described in step 1. it is also a functional requirement that the registers maintain a low state at the cke outputs in order to guarantee that the ddr sdrams continue to receive a low level on cke. this activation time, from asynchronous switching of reset from low to high, until the registers are stable and ready to accept an input signal, is t (act ) as specified in the register and dimm documentation. 4. the system can begin jedec defined ddr sdram self refresh exit procedure. self refresh entry/exit (reset high, clocks running) ? optional as this sequence does not involve the use of the reset function, the jedec standard sdram specification explains in detail the method for entering and exiting self refresh for this case. self refresh entry (reset high, clocks powered off) ? not permissible in order to maintain a valid low level on the register output, it is required that either the clocks be running and the system drive a low level on cke, or the clocks are powered off and reset is asserted low according to the sequence defined in this application note . in the case where reset remains high and the clocks are powered off, the pll drives a high-z clock input into the register clock input. without the low level on reset an unknown dimm state will result.
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